Tape carrier package having stacked semiconductor elements, and short and long leads

ABSTRACT

A tape carrier in which a plurality of semiconductor elements can be mounted. The tape carrier includes a base tape on which device holes are formed and a plurality of leads provided on the base tape, wherein inner lead portions, which extend from the periphery of the device hole toward the center of the device hole, are of different lengths.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a tape carrier package (TCP)which is a thin semiconductor device, a fabrication method thereof, anda tape carrier.

[0003] 2. Description of the Related Art

[0004] A conventional IC packaging is a method for protecting an IC bodyfrom external substances and mounting on a circuit board. In recentyears, because IC products have an even wider range of applications, andmaterial, size and configuration of packages have become diversified,and as the demand to mount a larger number of pins at an even higherdensity has increased, the demand to add higher values to the packageitself has increased even more.

[0005] One such package configuration is a TCP. A tape carrier herein isa semiconductor device fabricated in the following manner. A device holeis first formed in a flexible base tape, leads (wiring patterns) areformed by, for example, photolithography, and then a solder resist isformed to protect the leads. The TCP is a package in which semiconductorelements are mounted on the tape carrier and sealed by, for example, aresin. A package in which semiconductor element(s) are mounted on a tapecarrier but are not sealed by a molding is referred to as a structure.

[0006] In a conventional tape carrier, on a photographic film-like basetape made of, for example, polyimide, device holes are formed along thelongitudinal direction of the base tape. Many sprocket holes areprovided in the vicinity of and along the both width direction edges ofthe base tape so as to be parallel to the device holes, to facilitateconveyance of the base tape during manufacturing thereof, or the like. Aplurality of leads is formed as inner lead portions which protrudetoward each device hole. These leads are generally formed of aconductive metal, such as aluminum, copper, or the like. A solder resistis formed on the leads to protect the wiring pattern at a portion of theleads that are on the base tape. The entire surface of each of the leadsis plated with Sn (tin), Au (gold), solder, or the like for protectionand for bonding the leads.

[0007] To mount semiconductor elements on the tape carrier, thesemiconductor elements are bonded to the inner lead portions by, forexample, eutectic reaction or thermo-compression. Then, a mold is formedby a resin, or the like. Finally, the base tape is cut out to form eachpackage. The package is surface mounted on, for example, a printedwiring board by bonding outer lead portions thereof to the printedwiring board.

[0008] A conventional TCP is shown in FIGS. 15A and 15B. FIG. 15A is aplan view of the conventional TCP and FIG. 15B is a sectional view ofthe conventional TCP taken along line C-C′ of FIG. 15A. A base film 101is made of, for example, polyimide. Sprocket holes 102 are formed on thebase film 101 for conveyance of the base film 101. A semiconductorelement 110 includes protruding electrodes 111 which are connected toterminals 103 via inner lead portions 105. The terminals 103 areconnected to external circuits. The inner lead portions 105 and theterminals 103 are made of copper, formed by etching and plated with Sn,Au, or solder. The terminals 103 are wider than the inner lead portions.105. A solder resist 106 is formed on the inner lead portions 105 toprotect the copper-made pattern except the terminals 103. A sealingresin 112 is provided to cover and protect the semiconductor element 110and the inner lead portions 105.

[0009] Another conventional TCP is shown in FIGS. 16A and 16B, which isdisclosed in Japanese Patent Application Laid-Open (JP-A) No. 5-21703.FIG. 16A is a plan view of an IC package and FIG. 16B is a sectionalview taken along line C-C′ of FIG. 16A. This TCP is fabricated in thefollowing manner. Device holes 104 are formed on a tape base 102. Leads108 are provided on the tape base 102 at the periphery of the devicehole 104. Several semiconductor chips 106 are stacked in the device hole104. Tips of the leads 108 are formed as inner lead portions 108 a,which are connected to bumps 110 disposed on the semiconductor chips106. Then, the semiconductor chips 106 and the device hole 14 are sealedby, for example, a sealing resin 112. This conventional structure hasdrawbacks in that, because the semiconductor chips 106 are stacked withchip surfaces on which leads 108 are to be bonded facing each other, itis necessary to overturn the package during bonding of the leads 108.Further, because only the leads extending in opposed two directions areconnected to each semiconductor chip 106, there are limits to increasingpackaging density of semiconductor chips.

[0010] For several years, an IC package, known as a BGA (i.e., ball gridarray) package which can be mounted at a high density on a printedwiring board, has been developed. In the BGA package, metal balls forconnecting to external circuits are disposed in a grid-like pattern atthe bottom of the IC package. In this configuration, because terminalsfor external connection are disposed in a two-dimensional plane, thenumber of pins can be increased without changing the dimensions of thepackage very much.

[0011]FIGS. 17A and 17B illustrate a BGA structure disclosed in JP-A No.8-148526, which uses a tape carrier. FIG. 17A is a sectional elevationview, and FIG. 17B is a bottom view, of a BGA type IC package. The BGAsemiconductor device has excellent moisture resistance property, and canbe fabricated at a low cost, and can be produced in large quantities. Inthe BGA semiconductor device, a device hole 102 a is formed in thecenter of a flexible resin substrate made of, for example, polyimidefilm. Leads 103 formed of a copper foil are provided at a surface of thesubstrate, and the substrate is used as a TCP substrate. Tips of theleads 103 are formed as inner lead portions 103 a, which are connectedto electrodes 101 a of a semiconductor chip 101. Each lead 103 isconnected to a corresponding bump 105, such as a solder ball disposed atthe bottom surface of the package.

[0012] In such conventional tape carriers, only one semiconductorelement can be mounted on a single tape carrier, and it is difficult tomount several semiconductor elements, particularly semiconductorelements having different sizes, on a single tape carrier at a highdensity to improve functions of the semiconductor package.

[0013] In the package configuration which employs a combination of thetape carrier and the BGA, a larger number of external terminals may beextended from a package of the same size as those of conventional ones.However, it is very difficult to improve functions of the package itselfby densely mounting several semiconductor elements on a single tapecarrier.

SUMMARY OF THE INVENTION

[0014] In view of the aforementioned, an object of the present inventionis to improve functions of and to add further values to a semiconductorpackage by mounting several semiconductor elements (particularlysemiconductor elements of different sizes) in a single device hole of atape carrier without losing TCP advantages of being compact and thin.

[0015] A semiconductor package of the present invention comprises: atape carrier; a first semiconductor element having a surface and a firstelectrode, on which surface the first electrode is provided; a longerlead which is provided on the tape carrier and connected to the firstelectrode; a second semiconductor element having a surface and a secondelectrode, on which surface the second electrode is provided, and thefirst semiconductor element is stacked; a shorter lead which is providedon the tape carrier and connected to the second electrode and is shorterthan the longer lead; and a resin material which seals the firstsemiconductor element, the second semiconductor element, the longer leadand the shorter lead.

[0016] In this structure, two semiconductor elements can be stacked andaccommodated in a single TCP and the semiconductor device can be madethinner. Therefore, functions of the TCP can be improved and highervalues can be added to the TCP.

[0017] Another semiconductor package comprises: a tape carrier; a firstsemiconductor element having a surface and a first electrode, on whichsurface the first electrode is provided; a longer lead having two endsand a first land, the one end being connected to the first electrode andthe other end forming the first land on the tape carrier; a secondsemiconductor element having a surface and a second electrode, on whichsurface the second electrode is provided, and the first semiconductorelement is stacked; a shorter lead having two ends and a second land,the one end being connected to the second electrode and the other endforming a second land on the tape carrier; a resin material which sealsthe first semiconductor element, the second semiconductor element, thelonger lead and the shorter lead; and solder balls, which are mounted onthe first and second lands for external connection.

[0018] In this structure, since the TCP employs the BGA structure, theTCP can be solder-mounted on a circuit board with other parts at thesame time by reflowing solder.

[0019] The present invention further includes at least another longerlead and at least another shorter lead, wherein each of the longer leadsand each of the shorter leads are arranged so as to alternate with eachother.

[0020] In this structure, because a plurality of first and secondelectrodes and a plurality of longer and shorter leads are provided, andeach of the longer leads and each of the shorter leads are arrangedalternately adjacent to each other, the upper and the lowersemiconductor elements can be easily connected.

[0021] The second semiconductor element is larger than the firstsemiconductor element, and comprises a surface area that faces the firstsemiconductor element and the second electrode is disposed outside thearea.

[0022] The first semiconductor element includes a first surface, onwhich the first electrode is formed, and a second surface, which isopposite the first surface; the second semiconductor element includes athird surface, on which the second electrode is formed, and a fourthsurface, which is opposite the third surface; and the firstsemiconductor element and the second semiconductor element are stackedsuch that the second surface faces the third surface.

[0023] In this structure, the lower semiconductor element is larger thanthe upper semiconductor element, and the electrode of the lowersemiconductor element is disposed outside the area overlapping the uppersemiconductor element. Therefore, the upper and the lower semiconductorelements can be stacked such that the surfaces having the electrodesthereon face the same direction. Accordingly, it is unnecessary tooverturn the package during bonding of the inner lead portions to theelectrodes as in the case of conventional package.

[0024] Further, the fourth surface is substantially devoid of the resinmaterial, and the resin material is applied to substantially theremainder of the package.

[0025] Accordingly, since no resin material is applied to the bottomsurface of the lower semiconductor element, the package on the whole canbe thinner.

[0026] The first and the second semiconductor elements are adhered toeach other.

[0027] In this structure, each of the lower and the upper semiconductorelements has two sets of edges which are substantially parallel to eachother, and each of the longer and the shorter leads extends orthogonallyto each edge. Accordingly, the leads are arranged regularly and the TCPcan be made compact.

[0028] The longer and the shorter leads extend outwardly in thesubstantially same plane. The first and the second semiconductorelements are bonded together using an adhesive.

[0029] Such a structure makes it easy to mount the TCP on the circuitboard.

[0030] Further, to overcome the disadvantages of the prior art, a tapecarrier of the present invention includes: a base tape having a devicehole formed therein; and a plurality of leads provided on the base tape,wherein inner lead portions of the leads which extend from the peripheryof the device hole toward the center of the device hole have severaldifferent lengths.

[0031] In this structure, several semiconductor elements of differentsizes can be mounted in a single device hole of the tape carrier.Therefore, functions of the TCP can be improved and higher values can beadded to the TCP without losing TCP advantages of being compact andthin.

[0032] Further, in the present invention, surfaces of severalsemiconductor elements are spaced apart from one another. Therefore,mutual interference between one semiconductor element and othersemiconductor elements resulting from noise, or the like, generated bythe other semiconductor elements can be reduced. Accordingly, improperoperations of the semiconductor elements can be prevented whileachieving aforementioned objects.

[0033] In the present invention, because BGA is employed at the externalconnection terminals of the outer lead portion, the arrangement of theleads can be determined freely. Therefore, the number of degrees offreedom in the arranging of the terminals which output signals of themounted semiconductor element and designing of the device using the TCPincreases. Accordingly, the synergy between the TCP and the BGA helps toimprove functions of the TCP, to integrate an increased number of chips,and to add higher values to the TCP in the same mounting area, withoutlosing the TCP advantages of being compact and thin. By stacking severalTCPs of BGA type, output and input terminals of two or more tapecarriers can be connected to a mount substrate in a mount area of asingle tape carrier. Moreover, because semiconductor elements mounted ona tape carrier can be connected to one another, semiconductor elementscan be integrated even more densely and the functions of the TCP can befurther improved.

BRIEF DESCRIPTION OF THE DRAWINGS

[0034]FIG. 1A is a plan view of a TCP of a first embodiment of thepresent invention.

[0035]FIG. 1B is a sectional view taken along line C-C′ of FIG. 1A.

[0036]FIG. 2A is a plan view of a TCP of a second embodiment of thepresent invention.

[0037]FIG. 2B is a sectional view taken along line C-C′ of FIG. 2A.

[0038]FIG. 3A is a plan view of a TCP of a third embodiment of thepresent invention.

[0039]FIG. 3B is a sectional view taken along line C-C′ of FIG. 3A.

[0040]FIG. 4A is a plan view of a TCP of a fourth embodiment of thepresent invention.

[0041]FIG. 4B is a sectional view taken along line C-C′ of FIG. 4A.

[0042]FIG. 5A is a plan view of a TCP of a fifth embodiment of thepresent invention.

[0043]FIG. 5B is a sectional view taken along line C-C′ of FIG. 5A.

[0044]FIG. 6A is a plan view of a TCP of a sixth embodiment of thepresent invention.

[0045]FIG. 6B is a sectional view taken along line C-C′ of FIG. 6A.

[0046]FIG. 7A is a plan view of a TCP of a seventh embodiment of thepresent invention.

[0047]FIG. 7B is a sectional view taken along line C-C′ of FIG. 7A.

[0048]FIG. 8 is a sectional view of a TCP of an eighth embodiment of thepresent invention.

[0049]FIG. 9A is a plan view of a TCP of a ninth embodiment of thepresent invention.

[0050]FIG. 9B is a sectional view taken along line C-C′ of FIG. 9A.

[0051]FIG. 10 is a sectional view of a TCP of a tenth embodiment of thepresent invention.

[0052]FIG. 11 is a sectional view of a TCP of an eleventh embodiment ofthe present invention.

[0053]FIG. 12 is a sectional view of a TCP of a twelfth embodiment ofthe present invention.

[0054] FIGS. 13A-13D are sectional views illustrating steps offabricating a TCP of a thirteenth embodiment of the present invention.

[0055] FIGS. 14A-14D are sectional views illustrating steps offabricating a TCP of a fourteenth embodiment of the present invention.

[0056]FIG. 15A is a plan view of a conventional TCP.

[0057]FIG. 15B is a sectional view taken along line C-C′ of FIG. 15A.

[0058]FIG. 16A is a plan view of another conventional TCP (disclosed inJP-A No. 5-21703).

[0059]FIG. 16B is a sectional view taken along line C-C′ of FIG. 16A.

[0060]FIG. 17A is a sectional elevation of yet another conventional TCP(disclosed in JP-A No. 8-148526).

[0061]FIG. 17B is a bottom view of FIG. 17A.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0062] Hereinafter, embodiments of the present invention will bedescribed with reference to the drawings.

[0063] First Embodiment

[0064]FIGS. 1A and 1B illustrate a first embodiment of the presentinvention. FIG. 1A is a plan view showing a TCP of the first embodimentof the present invention and FIG. 1B is a sectional view of FIG. 1Ataken along line C-C′.

[0065] A base film 101 is made of a polyimide, for example. Sprocketholes 102 are formed on the base film 101 to convey the same. Protrudingelectrodes 111 are provided on a lower semiconductor element 110. Theelectrodes 111 are connected to terminals 103 via inner lead portions105. Protruding electrodes 108 are provided on an upper semiconductorelement 107. The electrodes 108 are connected to terminals 103 via innerlead portions 104. The terminals 103 are connected to externalsubstrates. The width of the inner lead portion 104 or 105 decreases atthe portion where it is connected to the electrode 108 or 111 to makespace between adjacent leads. The inner lead portion 105 is shorter thanthe inner lead portion 104. The upper and the lower semiconductorelements 107 and 110 are substantially square-shaped, and the uppersemiconductor element 107 is smaller than the lower semiconductorelement 110. The tape carrier of the present embodiment may be appliedto upper and lower semiconductor elements 107 and 110 of any shape, suchas rectangular, by changing an arrangement of the inner lead portionsformed on the base film 101. The upper semiconductor element 107 isstacked on and adhered to the lower semiconductor element 110 using anadhesive 109.

[0066] The electrodes 108 and 111 are disposed along each of four edgesof the upper or lower semiconductor element 107 or 110. The electrodes111 are spaced apart from the peripheral edges of the uppersemiconductor element 107, whereby the upper semiconductor element 110does not inhibit bonding of the inner lead portions 104 to theelectrodes 111 of the lower semiconductor element 110. The uppersemiconductor element 107 is aligned with the lower semiconductorelement 110 so that corresponding edges of the two semiconductorelements 107 and 110 are parallel to each other, and, at the same time,each electrode 108 of the upper semiconductor element 107 is disposedbetween the adjacent electrodes 111 of the lower semiconductor element110. The inner lead portions 104 and 105 are connected to the electrodes108 and 111, respectively. Each inner lead portion 104 is disposedbetween the adjacent inner lead portions 105, i.e., the inner leadportion 104 and the inner lead portion 105 are disposed alternately.However, arrangement of the inner lead portions 104 and 105 is notlimited to the above manner. For example, of the leads extending in onedirection, several inner lead portions 104 may be disposed successively,and, subsequently, several inner lead portions 105 may be disposedsuccessively. Further, the four groups of the leads extending in each ofthe four directions may only include one of inner lead portions 104 or105.

[0067] End portions of the inner lead portions 104 and 105, which areopposite to the end portions where the inner lead portions 104 and 105are connected to the electrodes 108 and 111, are formed as the terminals103. The terminals 103 are connected to external circuits. The terminals103 and the inner lead portions 104 and 105 are plated with Sn, Au orsolder. These copper wiring patterns composed of the inner lead portions104 and 105 are nipped between a solder resist 106 and the base film 101and shielded from the outside. A sealing resin 112 seals the whole ofupper semiconductor element 107, side surfaces of the lowersemiconductor element 110, the inner lead portions 104 and 105, a partof the solder resist 106 and a part of the base film 101 to protect thewhole package. In this structure, because the bottom surface of thelower semiconductor element 110 is not covered with the sealing resin112, the TCP on the whole can be made thinner than conventional TCPs.

[0068] Second Embodiment

[0069]FIGS. 2A and 2B illustrate a second embodiment of the presentinvention, which employs a BGA structure. In the BGA structure, aterminal 103 which is connected to an external circuit includes a landon which a metal ball, such as a solder ball, is disposed. FIG. 2A is aplan view of a TCP of the second embodiment and FIG. 2B is a sectionalview taken along line C-C′ of FIG. 2A. A base film 101 is made of, forexample, polyimide. Sprocket holes 102 are formed on the base film 101to convey the same. As in the case of the first embodiment, the upperand the lower semiconductor elements 107 and 110 are substantiallysquare-shaped, and the upper semiconductor element 107 is smaller thanthe lower semiconductor element 110. The tape carrier of the presentembodiment may be applied to upper and lower semiconductor elements 107and 110 of any shape, such as rectangular, by changing the arrangementof the inner lead portions formed on the base film 101. The uppersemiconductor element 107 is aligned with the lower semiconductorelement 110 so that corresponding edges of the two semiconductorelements 107 and 110 are parallel to each other. The upper semiconductorelement 107 is stacked on and adhered to the lower semiconductor element110 using an adhesive 109. The inner lead portion 105 is shorter thanthe inner lead portion 104.

[0070] Each of the inner lead portions 104 and 105 is connected to acorresponding land 115 and connected to an external circuit via the land115. The lands 115 are disposed in a grid pattern on a surface of thebase film 101 to surround the stacked structure of the upper and thelower semiconductor elements 107 and 110. On each land 115, a metal ball116, such as a solder ball, is disposed through which the package isconnected to external circuits. The metal balls 116 protrude from thesurface of a sealing resin 112. In this configuration, because the lands115 for external connection are disposed in a two-dimensional plane, thenumber of pins can be increased without changing the dimensions of thepackage very much. The land 115, the inner lead portions 104 and 105 aremade of copper and plated with Sn, Au or solder.

[0071] The electrodes 108 and 111 are disposed along each of four edgesof the upper and lower semiconductor elements 107 and 110, respectively.The electrodes 111 are spaced apart from the peripheral edges of theupper semiconductor element 107, whereby the upper semiconductor element107 does not inhibit bonding of the inner lead portions 104 and 105.

[0072] Each inner lead 104 is disposed between the adjacent inner leadportions 105. The land-side end portions of the inner lead portions 104and 105, which are opposite to the end portions where the inner leadportions 104 and 105 are connected to the electrodes 108 and 111, areformed as the terminals for being connected to external circuits. Theinner lead portions 104 and 105, which are made of copper, are nippedbetween a solder resist 106 and the base film 101 and shielded from theoutside. A sealing resin 112 seals the whole of the upper semiconductorelement 107, side surfaces of the lower semiconductor element 110, theinner lead portions 104 and 105, a part of the solder resist 106 and apart of the base film 101 to protect the whole of package. As in thecase of the first embodiment, the bottom surface of the lowersemiconductor element 110 is not covered with the sealing resin 112.Accordingly, the TCP of the present embodiment has the advantage that itcan be made thinner since no sealing resin is applied to the bottomsurface.

[0073] Third Embodiment

[0074]FIGS. 3A and 3B schematically illustrate a third embodiment of thepresent invention. FIG. 3A is a plan view schematically illustrating aTCP structure having three semiconductor elements mounted on a tapecarrier. FIG. 3B is a sectional view taken along line C-C′ of FIG. 3Aand seen from the direction indicated by arrows.

[0075] Hereinafter, the third embodiment of the present invention willbe described with reference to FIGS. 3A and 3B. A tape carrier 10 of thepresent embodiment is formed by an elongated base tape 11 which includesa plurality of device holes 14. Sprocket holes 12 are formed on the basetape 11 to convey the same. Several sets of leads 16 are disposedregularly along each of the four peripheral edges 15 of the device hole14. Each set of leads 16 is composed of three leads including inner leadportions of three different lengths, i.e., a first lead 16 a, a secondlead 16 b which is shorter than the first lead 16 a, and a third lead 16c which is shorter than the second lead 16 b, which are basicallyarranged in this order. Here, the leads 16 a, 16 b and 16 c aredistinguished by the lengths of the inner lead portions thereof, ratherthan the overall lengths (the same applies to the followingembodiments). As shown in FIG. 3A, in the present embodiment, three setsof leads 16 are disposed along each of the four peripheral edges 15 ofthe device hole 14. A third lead 16 c is added at the right end of thethree sets of the leads 16. The inner lead portion, as used herein,means a portion of the inner lead portion 16 extending from the devicehole edge 15 into the device hole 14.

[0076] A solder resist 18 covers and protects portions of the leads 16,which portions are disposed on the base tape 11.

[0077] Although the solder resist 18 actually covers the leads 16, onlyoutlines of the solder resist 18 are shown in FIG. 3A to make thisdrawing of the arrangement of the leads 16 simple and easy to understand(the same applies to the following drawings).

[0078] The inner lead portion lengths of the first, second and thirdleads 16 a, 16 b and 16 c are separately decided based on the size andthe thickness of the semiconductor element which is to be bonded to eachinner lead portion, and based on the electrode arrangement for bondingwith the inner lead portion (which will be described in detail later).

[0079] Three semiconductor elements, i.e., a first semiconductor element20, a second semiconductor element 30 and a third semiconductor element40, are mounted in the device hole 14. First protruding electrodes 22,which are used as bonding pads, are disposed on an upper surface of thefirst semiconductor element 20 along the edges thereof. Secondprotruding electrodes 32 are disposed on an upper surface of the secondsemiconductor element 30 along the edges thereof. Third protrudingelectrodes 42 are disposed on an upper surface of the thirdsemiconductor element 40 along the edges thereof.

[0080] Each of the first, second and third semiconductor elements 20, 30and 40 has a rectangular-parallelepiped shape and the shapes of theupper surfaces of which are similar to one another. The thickness of thethree semiconductor elements is identical. The dimensions of the uppersurface of the first semiconductor element 20 are the smallest of thethree, the dimensions of the upper surface of the second semiconductorelement 30 are larger than those of the first semiconductor element 20,and the dimensions of the upper surface of the third semiconductorelement 40 are the largest of the three. These three semiconductorelements 20, 30 and 40 are disposed on the tape carrier 10 so as to forma stepped-pyramidal shape.

[0081] It is preferable to adhere the semiconductor elements mounted onthe tape carrier 10 (the first semiconductor element 20, the secondsemiconductor element 30 and the third semiconductor element 40 in thepresent embodiment) to one another using an adhesive (not shown) tominimize the thickness of the TCP, as long as functions of thesemiconductor elements are not impaired and the semiconductor elementscan be stacked with enough area left for the bonding pads. For example,the bottom surface of the first semiconductor element 20 is adhered tothe upper surface of the second semiconductor element 30, and the bottomsurface of the second semiconductor element 30 is adhered to the uppersurface of the third semiconductor element 40 using the adhesive.However, the semiconductor elements may also be disposed in a mold 60,with spaces left between adjacent semiconductor elements to preventoperation malfunctions of the semiconductor elements resulting from, forexample, mutual interference among the semiconductor elements due tonoise, or the like, generated by the semiconductor elements.

[0082] A lower surface of the end portion of the first lead 16 a isbonded to the bonding pad, i.e., the first protruding electrode 22 onthe first semiconductor element 20. A lower surface of the end portionof the second lead 16 b is bonded to the second protruding electrode 32on the second semiconductor element 30. A lower surface of the endportion of the third lead 16 c is bonded to the third protrudingelectrode 42 on the third semiconductor element 40.

[0083] In the third embodiment, in a case in which three semiconductorelements are to be mounted, several sets of the inner lead portionshaving the three different lengths are disposed regularly and parallelto one another on the tape carrier. However, by altering, for example,the arrangement of the semiconductor elements, the number ofsemiconductor elements to be mounted can be larger than the number ofthe lengths of the inner lead portions in each set.

[0084] Accordingly, the present invention is a tape carrier and a TCPemploying the same, the tape carrier including sets of inner leadportions having two or more different lengths, and the number ofsemiconductor elements to be mounted being equal to or more than thenumber of the inner lead portion lengths.

[0085] As described above, by preparing inner lead portions havingdifferent lengths based on the number or the size of the semiconductorelements to be mounted, the arrangement of the bonding pad, or the like,two or more semiconductor elements, especially of different sizes, canbe easily mounted on a single tape carrier. Therefore, functions of theTCP can be improved and higher values can be added to the TCP within thesame mounting area as those of conventional TCPs.

[0086] Because the first semiconductor element 20 is placed on the topof the stacked semiconductor elements, the protruding electrodes 22 maybe disposed at any positions on the first semiconductor element 20 aslong as the first leads 16 a of the tape carrier 10 can be bondedthereto. However, in the case in which several semiconductor elementsare adhesively stacked, positions of the second protruding electrodes 32on the upper surface of the second semiconductor element 30 must bedecided so that the first semiconductor element 20 and the second leads16 b which are bonded on the second protruding electrodes 32 do not formshort circuits, and that the second protruding electrodes 32 on thesecond semiconductor element 30 and the first protruding electrodes 22on the first semiconductor element 20 are physically and electricallyspaced apart from each other. But this does not apply to a case in whichthe semiconductor elements are not adhered to and are spaced apart fromone another. Positioning of the third protruding electrodes 42 on thesurface of the third semiconductor element 40 is similar to that of thesecond protruding electrodes 32.

[0087] Generally, the semiconductor elements are offset downwardly fromthe plane of the tape carrier when bonded to the inner lead portions, toprevent short circuits formed between leads from occurring.

[0088] In a case in which the tape carrier of the present invention isproduced using prefabricated semiconductor elements, the lengths of theinner lead portions are determined based on the following conditions:the size and thickness of the semiconductor elements to be bonded to theinner lead portions, the margin of the inner lead portion required for adesired offset, and the like. It is preferable to determine thethickness of the completed package as a whole so that no malfunctionswill occur when the package is mounted on, for example, a printed wiringboard, without impairing the characteristics of the TCP, such that theycan be made thin and compact.

[0089] It is preferable to set the lengths of the inner lead portions asshort as possible within the range of the above-described conditions toprevent short circuits from being formed between the inner leadportions. The widths of the end portions of the inner lead portions arepreferably set as wide as possible to make it easier to bond the innerlead portions to the bonding pads of the semiconductor elements.

[0090] In the third embodiment and in the following embodiments, anymaterials may be employed as the base tape as long as they meet theobject of the present invention.

[0091] Though the device hole 14 and the surfaces of the semiconductorelements in the third embodiment are rectangular-shaped, theconfiguration of the present invention sets no limits on the shapes ofthe device hole 14 and the semiconductor elements. They may also becircular or elliptical-shaped (the same applies to the followingembodiments).

[0092] Though the semiconductor elements mounted on the tape carrier 10are of the same thickness in the third embodiment, semiconductorelements of different thicknesses may also be employed as long as theobjects of the present invention are accomplished (the same applies tothe following embodiments).

[0093] In the third embodiment, the upper surfaces of the semiconductorelements mounted on the tape carrier 10 are all rectangular-shaped.However, the upper surfaces of the first, second and third semiconductorelements 20, 30 and 40 may be of different shapes as long as their ownfunctions are not impaired (the same applies to the followingembodiments).

[0094] In the present embodiment, the structure of the tape carrier(especially the inner lead portions) are designed based on the structureof the semiconductor elements. However, electrodes on the semiconductorelements may be optimally arranged to be suited for a tape carrier whichincludes sets of inner lead portions of several lengths.

[0095] The semiconductor elements and the inner lead portions, afterbonded to each other, are sealed by a mold 60 formed of resin, or thelike. In a case in which a thermosetting adhesive is applied to thesemiconductor elements, the adhesive is hardened by the heat appliedwhen the mold 60 is formed (the same applies to the followingembodiments).

[0096] In the tape carrier structure of the third embodiment, thesemiconductor elements having different sizes may be mounted at thesingle device hole. Therefore, functions of the TCP can be even furtherimproved and even higher values can be added to the TCP within the samemounting area as those of conventional TCPs without sacrificingadvantages of a TCP that is compact and thin.

[0097] Next, referring to FIGS. 3A and 3B, an example of fabricationmethod of the tape carrier and the TCP of the present invention will beexplained.

[0098] First, the sprocket holes 12 and the device holes 14 are formedon the flexible base tape 11 which is formed of a polyimide film, apolyester film or the like. These holes are preferably formedmechanically with a mold, a puncher, or the like.

[0099] The upper surface of the base tape 11 is laminated with copperfoil. Thereafter, the lengths, widths, arrangements, and the like, ofthe inner lead portions are decided based on the size of thesemiconductor elements, electrode arrangements, positions of thesemiconductor elements in the package, and the like. Then, according tothe above conditions, a plurality of leads 16 is formed through aphoto-resist forming process, an etching process, or the like.

[0100] Thereafter, all of the exposed surfaces of the leads 16 areplated with metal, such as Au, Sn, solder, or the like, to facilitatebonding to the semiconductor elements and to protect the leads. Finally,the solder resist 18 is formed on the upper surface of the base tape 11to protect the leads 16 for an area of the leads 16, which area is onthe base tape 11. In this manner, the tape carrier 10 of the presentinvention is fabricated.

[0101] Next, a fabrication method of the TCP will be explained. Thesemiconductor elements are generally bonded to the tape carrier 10 bythe eutectic reaction or the thermo-compression between the metalplating material plated on the leads 16 and the bonding pads, or thelike, disposed on the semiconductor elements. To explaini in moredetail, the metal plating material which is applied to at least uppersurface, and optionally, the lower and/or side surfaces (one or both ofthe side surfaces) is melted to be bonded to the bonding pads of thesemiconductor elements by the eutectic reaction or thethermo-compression.

[0102] Each of the first leads 16 a and the corresponding firstprotruding electrode 22 of the first semiconductor element 20 arealigned and bonded to each other using a bonding device. Then, each ofthe second leads 16 b and the corresponding second protruding electrode32 of the second semiconductor element 30 are aligned with and bonded toeach other using the bonding device. When the leads and the electrodesare aligned with each other, an adhesive, or the like, may be applied inadvance to the lower surface of the first semiconductor element 20 toadhere the first semiconductor element 20 to the second semiconductorelement 30. The third semiconductor element 40 is bonded to the thirdleads 16 c in a similar manner. If desired, the adhesive, or the like,may be applied to the lower surface of the second semiconductor element30 to adhere the second semiconductor element 30 to the thirdsemiconductor element 40, so that the three semiconductor elements areadhered to one another. If four or more of the semiconductor elementsare to be mounted on the tape carrier of the present invention, the sameprocessing may be employed in principle. In this manner, the structureshown in FIGS. 3A and 3B is obtained.

[0103] Finally, the mounted semiconductor elements and the inner leadportions are sealed by a mold 60 formed of resin, or the like. At thistime, in consideration of a heat dissipation property of thesemiconductor elements, cost performance optimization resulting fromsavings of molding material, and the like, surfaces of one or more ofthe mounted semiconductor elements may be exposed. If semiconductorelements of different widths are mounted, surfaces of one or more of thesemiconductor elements may be exposed in accordance with the totalthickness of the stacked semiconductor elements.

[0104] Fourth Embodiment

[0105]FIGS. 4A and 4B schematically illustrate a fourth embodiment ofthe present invention. FIG. 4A is a plan view schematically illustratinga TCP structure having three semiconductor elements which are mounted inanother arrangement on a tape carrier 10. FIG. 4B is a sectional viewtaken along line C-C′ of FIG. 4A and seen from the direction indicatedby arrows.

[0106] Hereinafter, the fourth embodiment of the present invention willbe described with reference to FIGS. 4A and 4B. The tape carrier 10 ofthe fourth embodiment differs from that of the third embodiment in thatthe tape carrier 10 of the fourth embodiment comprises the sets of leads16, each set being composed of two leads including inner lead portionsof two different lengths, i.e., the first lead 16 a and the second lead16 b, which is shorter than the first lead 16 a. Several sets of leads16 are disposed parallel to one another on the base tape 11. As shown inFIG. 4A, two sets of leads 16 are disposed along each of the fourperipheral edges 15 of the device hole 14. A second lead 16 b is addedat the right end of the two sets of the leads 16. Several sets of leads16 are disposed parallel to one another so as to extend from the devicehole edge 15 into the device hole 14.

[0107] Three semiconductor elements, i.e., the first semiconductorelement 20, the second semiconductor element 30 and the thirdsemiconductor element 40, are mounted at the device hole 14. The firstprotruding electrodes 22 are disposed on the upper surface of the firstsemiconductor element 20. The second protruding electrodes 32 aredisposed on the upper surface of the second semiconductor element 30.The third protruding electrodes 42 are disposed on the upper surface ofthe third semiconductor element 40. Thus, the three semiconductorelements are oriented in the same direction in regard to the positionswhere the protruding electrodes are disposed.

[0108] Each of the first, second and third semiconductor elements 20, 30and 40 has a rectangular-parallelepiped shape. The upper and the lowersurfaces of the third semiconductor element 40 are of identicalsquare-shaped. The thickness of the three semiconductor elements isidentical. The dimensions of the upper surface of the firstsemiconductor element 20 are the smallest of the three, the dimensionsof the upper surface of the second semiconductor element 30 are largerthan those of the first semiconductor element 20, and the dimensions ofthe upper surface of the third semiconductor element 40 are the largestof the three. The length of the longer sides of the upper surface of thefirst semiconductor element 20 is equal to the length of the longersides of the upper surface of the second semiconductor elements 30. Thetotal length of a shorter side of the upper surface of the firstsemiconductor element 20 and a shorter side of the upper surface of thesecond semiconductor element 30 is smaller than the length of the longersides of the upper surface of the second semiconductor element 30 orthan the length of an outer peripheral edge of the upper surface of thethird semiconductor element 40. The first and second semiconductorelements 20 and 30 are disposed in parallel with the longer sides facingeach other. In the present embodiment, the first and the secondsemiconductor elements 20 and 30 are mounted on the upper surface sideof the third semiconductor element 40 so that their own functions arenot impaired. That is, the first and the second semiconductor elements20 and 30 are mounted so as not to impair the functions of the bondingpads, the protruding electrodes, or the like, disposed on the thirdsemiconductor element 40. Here, it is preferable to adhere these threesemiconductor elements to one another using an adhesive (not shown) tominimize the TCP thickness. That is, it is preferable to adhere thebottom surfaces of the first and the second semiconductor elements 20and 30 to the upper surface of the third semiconductor element 40.

[0109] The first leads 16 a are bonded to the protruding electrodes 22on the first semiconductor element 20 and the protruding electrodes 32on the second semiconductor element 30. The second leads 16 b are bondedto the protruding electrodes 42 on the third semiconductor elements 40.

[0110] Because the fabrication methods of the tape carrier 10 and theTCP of the present embodiment are substantially the same as those of thethird embodiment, explanation thereof will be omitted.

[0111] According to the fourth embodiment of the present invention,three semiconductor elements may be mounted on a tape carrier, whichincludes sets of leads comprising inner lead portions having twodifferent lengths. Therefore, the package can be made thinner than inthe case where three semiconductor elements are stacked sequentially.Accordingly, functions of the TCP can be improved and higher values canbe added to the TCP more efficiently.

[0112] Fifth Embodiment

[0113]FIGS. 5A and 5B schematically illustrate a fifth embodiment, whichis a modified embodiment of the fourth embodiment. FIG. 5A is a planview schematically illustrating an example of a TCP structure. FIG. 5Bis a sectional view taken along line C-C′ of FIG. 5A and seen from thedirection indicated by arrows.

[0114] Hereinafter, the fifth embodiment of the present invention willbe described with reference to FIGS. 5A and 5B.

[0115] A tape carrier and semiconductor elements mounted on the tapecarrier shown in FIGS. 5A and 5B are based on the structure of thefourth embodiment, and is characterized in that the first and the secondsemiconductor elements 20 and 30 are connected by metal wires 44.Because the structures, the arrangements, and the connectionrelationships of the tape carrier 10, the first, second, and thirdsemiconductor elements 20, 30, and 40 are similar to those described inconnection with the fourth embodiment, explanation thereof will beomitted. Only characteristics unique to the fifth embodiment, namely, aprovision of metal wires 44, will be described below.

[0116] The three semiconductor elements are mounted in a device hole 14.The first and second semiconductor elements 20 and 30 are mounted on theupper surface side of the third semiconductor element 40. The protrudingelectrodes 22 and 32 are disposed along the opposing edges of the firstand second semiconductor elements 20 and 30, respectively. The metalwires 44 are bonded to the protruding electrodes 22 and 32. Theprotruding electrodes 22 and 32, which are disposed with the opposingedges of the first and the second semiconductor elements 20 and 30interposed therebetween, are connected by the metal wires 44.

[0117] The metal wires 44 can be of any width and length, and can bemade of any material as long as the objects of the present invention canbe accomplished. However, from the viewpoint of fabrication process, itis preferable to select the width, length and material so that the samebonding device used for bonding the inner lead portions and theprotruding electrodes of the semiconductor elements can also be used.

[0118] According to the fifth embodiment of the present invention,because the first and second semiconductor elements 20 and 30 aredirectly connected, packaging operation may be carried out quickly.Moreover, because two semiconductor elements may be made to cooperate inthe package, the functions of the package can be even further improved.

[0119] Because the fabrication methods of the tape carrier 10 and theTCP of the present embodiment are substantially the same as those of thethird embodiment, explanation thereof will be omitted. Only parts of thefabrication method which is unique to the TCP of the fifth embodimentwill be explained below.

[0120] The first leads 16 a are aligned with and bonded to theprotruding electrodes 22 on the first semiconductor element 20 using abonding device. Then, the second leads 16 b are aligned with and bondedto the protruding electrodes 32 on the second semiconductor element 30and the protruding electrodes 42 on the third semiconductor elements 40using the bonding device. When the inner lead portions and theelectrodes are aligned with each other, an adhesive, or the like, isapplied in advance to the lower surface of the first semiconductorelement 20 to adhere the first and second semiconductor elements 20 and30 to the third semiconductor element 40.

[0121] The bonding of the metal wires 44 is preferably carried out,using a bonding device, when the semiconductor elements are beingaligned with one another in the device hole 14. Alternately, the bondingof the metal wires 44 may be carried out after all the inner leadportions are bonded, or the three semiconductor elements may be adheredto one another before being mounted on the tape carrier, then the firstand the second semiconductor elements 20 and 30 may be connected by themetal wires 44, and the stacked body of the semiconductor elements maybe bonded to the inner lead portions. In this manner, the structureshown in FIGS. 5A and 5B is obtained.

[0122] Finally, the mold 60 is formed in the same manner as described inconnection with the third embodiment.

[0123] Sixth Embodiment

[0124]FIGS. 6A and 6B schematically illustrate a sixth embodiment of thepresent invention. FIG. 6A is a plan view schematically illustrating aTCP structure having three semiconductor elements mounted on a tapecarrier 10. FIG. 6B is a sectional view taken along line C-C′ of FIG. 6Aand seen from the direction indicated by arrows.

[0125] Hereinafter, the sixth embodiment of the present invention willbe described with reference to FIGS. 6A and 6B.

[0126] In the sixth embodiment, as in the case of the fourth embodiment,the tape carrier 10 includes the sets of leads 16, each set beingcomposed of leads including the inner lead portions of two differentlengths, i.e., the first lead 16 a and the second lead 16 b which isshorter than the first lead 16 a. Several sets of the leads 16 aredisposed parallel to one another on the base tape 11. Two sets of leads16 are disposed along each of the four peripheral edges 15 of the devicehole 14. The size and arrangement of the semiconductor elements mountedon the tape carrier 10 of the sixth embodiment are different from thoseof the fourth embodiment.

[0127] Each of the three semiconductor elements has arectangular-parallelepiped shape. The upper and the lower surfaces ofthe first semiconductor element 20 have an identical square-shape. Thethickness of the three semiconductor elements is identical. The lengthof the longer sides of the upper surface of the second semiconductorelement 30 is equal to the length of the longer sides of the uppersurface of the third semiconductor element 40. The second and the thirdsemiconductor elements 30 and 40 are disposed parallel to but physicallyand electrically spaced apart from each other at the lower surface sideof the first semiconductor element 20 so that the longer sides of thesecond and third semiconductor elements face each other.

[0128] In the present embodiment, the second and the third semiconductorelements 30 and 40 are mounted at the lower surface side of the firstsemiconductor element 20 so that their own functions are not impaired.The first semiconductor element 20 is mounted on the second and thethird semiconductor elements 30 and 40, such that the firstsemiconductor element 20 does not contact the protruding electrodes 32and 42 on the second and the third semiconductor elements 30 and 40 andform short circuits, thereby impairing the functions of the electrodes.Thus, it is preferable to mount the first semiconductor element 20 atthe inner side of the bonding pads to which the inner lead portions ofthe second and the third semiconductor elements 30 and 40 are bonded.Here, it is preferable to adhere these three semiconductor elements toone another using an adhesive (not shown) to minimize the TCP thickness.That is, the bottom surface of the first semiconductor element 20 isadhered to the upper surfaces of the second and the third semiconductorelements 30 and 40 at an area where the functions of the semiconductorelement do not impair one another. The distance between the second andthe third semiconductor elements 30 and 40 can be varied in accordancewith, for example, the size of the first semiconductor element 20. Thethickness of the three semiconductor elements may be different from oneanother.

[0129] Each of the first leads 16 a is bonded to the correspondingprotruding electrode 22 on the first semiconductor element 20. Each ofthe second leads 16 b is bonded to the corresponding protrudingelectrode 32 or 42 on the second or the third semiconductor element 30or 40.

[0130] Because the fabrication methods of the tape carrier 10 of thepresent embodiment is substantially the same as those of the thirdembodiment, explanation thereof will be omitted. Only parts of thefabrication method which is unique to the TCP of the sixth embodimentwill be explained below.

[0131] Each of the inner lead portion end portions of the first leads 16a in the device hole 14 and the corresponding first protruding electrode22 of the first semiconductor element 20 are aligned with and bonded toeach other using a bonding device. Then, each of the inner lead portionend portions of the second leads 16 b and the corresponding second orthe third protruding electrode 32 or 42 of the second or the thirdsemiconductor element 30 or 40 are aligned with and bonded to each otherusing the bonding device. When the leads and the electrodes are alignedwith each other, an adhesive, or the like, may be applied in advance tothe lower surface of the first semiconductor element 20 to adhere thefirst semiconductor element 20 to the second and the third semiconductorelements 30 and 40. In this manner, the structure shown in FIGS. 6A and6B is obtained.

[0132] Finally, the semiconductor elements are sealed by a mold formedof resin, or the like. At this time, in consideration of a heatdissipation property of the semiconductor elements, cost performanceoptimization resulting from savings of molding material, and the like,surfaces of one or more of the mounted semiconductor elements may beexposed. If semiconductor elements of different widths are mounted,surfaces of one or more of the semiconductor elements may be exposed inaccordance with the total thickness of the stacked semiconductorelements.

[0133] With this structure, the same effects as those of the fourthembodiment can be achieved.

[0134] Seventh Embodiment

[0135]FIGS. 7A and 7B schematically illustrate a seventh embodiment ofthe present invention. FIG. 7A is a plan view schematically illustratinga TCP structure having two semiconductor elements mounted on a tapecarrier 10. Only outlines of the first semiconductor element 20 areshown in FIG. 7A to make this drawing of the arrangement and connectionsof the second semiconductor element 30 which is mounted under the firstsemiconductor element 20 simple and easy to understand. FIG. 7B is asectional view taken along line C-C′ of FIG. 7A and seen from thedirection indicated by arrows.

[0136] Hereinafter, the seventh embodiment of the present invention willbe described with reference to FIGS. 7A and 7B.

[0137] In the seventh embodiment, as in the case of the fourth and thesixth embodiments, the tape carrier 10 includes the sets of the leads16, each set being composed of two leads, including inner lead portionsof two different lengths, i.e., the first lead 16 a and the second lead16 b which is shorter than the first lead 16 a. Several sets of theleads 16 are disposed parallel to one another on the base tape 11. Thenumber and arrangement of the semiconductor elements mounted on the tapecarrier 10 of the seventh embodiment are different from those of thefourth and sixth embodiments.

[0138] In the tape carrier 10 of the present embodiment, twosemiconductor elements, i.e., the first semiconductor element 20 and thesecond semiconductor element 30 are mounted in the device hole 14.

[0139] The first and second semiconductor elements 20 and 30 are ofrectangular-parallelepiped shape. The upper and the lower surfaces ofthese semiconductor elements are square-shaped. These semiconductorelements have the same thickness. The dimensions of the upper surface ofthe first semiconductor element 20 are larger than those of the secondsemiconductor element 30.

[0140] The first protruding electrodes 22 are disposed on the lowersurface of the first semiconductor element 20 along the outer peripheraledges thereof. The second protruding electrodes 32 are disposed on theupper surface of the second semiconductor element 30 along the outerperipheral edges thereof. Therefore, these semiconductor elements aremounted with the first protruding electrodes 22 and the secondprotruding electrodes 32 facing each other. That is, these semiconductorelements are oriented in opposite directions.

[0141] Lower surfaces of end portions of the first leads 16 a are bondedto the protruding electrodes 32 provided on the upper surface of thesecond semiconductor element 30 in a so-called “face-down” manner. Uppersurfaces of end portions of the second leads 16 b are bonded to theprotruding electrodes 22 provided on the lower surface side of the firstsemiconductor element 20 in a so-called “face-up” manner.

[0142] If the protruding electrodes contact each other, short circuitswill be formed and the functions of the mounted semiconductor elementsand thus the package itself will be impaired. To prevent this, the firstand the second semiconductor elements 20 and 30 must be spaced apartfrom each other. In the present embodiment, the first and the secondsemiconductor elements 20 and 30 are spaced apart by a distance d1,whereby formation of short circuits between these semiconductor elementsis prevented.

[0143] The semiconductor elements in the present embodiment may be ofdifferent thicknesses.

[0144] The fabrication methods of the tape carrier 10 of the presentembodiment is substantially the same as those of the third embodiment,except that the sets of inner lead portions having two different lengthsare optimally selected based on the semiconductor element to which theinner lead portions are to be bonded, so explanation of the fabricationmethods of the tape carrier 10 will be omitted. Only a part of thefabrication method characteristic of the TCP of the seventh embodimentwill be explained below.

[0145] Each of the inner lead portion end portions of the first leads 16a in the device hole 14 and the corresponding second protrudingelectrode 32 of the second semiconductor element 30 are aligned with andbonded to each other using a bonding device. Then, the tape carrier 10is turned to have the reverse side up. Thereafter, each of the secondleads 16 b and the corresponding first protruding electrodes 22 of thefirst semiconductor element 20 are aligned with and bonded to each otherusing the bonding device. In this manner, the structure shown in FIGS.7A and 7B is obtained.

[0146] Though the fabrication method of the present embodiment includesa step of turning the tape carrier 10, this step may be omitted by useof, for example, a device with which the inner lead portions may bebonded to the both sides of the tape carrier 10.

[0147] Finally, the semiconductor elements are sealed by a mold formedof resin, or the like. The mold 60 is formed such that the first andsecond semiconductor elements 20 and 30 are spaced apart by the distanced1.

[0148] As in the cases of the above-described embodiments, inconsideration of heat dissipation properties of the semiconductorelements, cost performance optimization resulting from savings ofmolding material, and the like, surfaces of one or more of thesemiconductor elements mounted on the tape carrier 10 may be exposed.

[0149] According to the structure of the seventh embodiment of thepresent invention, the protruding electrodes, i.e., the bonding pads, ofthe mounted semiconductor elements are protected inside the package.Therefore, the strength of the TCP against external impacts can beimproved, whereby the functions of the TCP can be further improved as inthe cases of the above-described embodiments, and the yields can beincreased.

[0150] Eighth Embodiment

[0151]FIG. 8 is a sectional view schematically illustrating an eighthembodiment, which is a modified embodiment of the seventh embodiment.The plan view of the present embodiment is omitted because it issubstantially the same as FIG. 7A.

[0152] In the eighth embodiment, as in the case of the seventhembodiment, the tape carrier 10 includes the sets of the leads 16. Eachof the sets is composed of the two leads including the inner leadportions of two different lengths, i.e., the first lead 16 a and thesecond lead 16 b, which is shorter than the first lead 16 a. Severalsets of leads 16 are disposed parallel to one another on the base tape11. The present embodiment differs from the seventh embodiment in thatthe first semiconductor element 20 and the second semiconductor element30 are spaced apart from each other by a distance d2, and thus thelengths of the inner lead portions are optimally decided. The distanced2 of the present embodiment is larger than the distance d1 of theseventh embodiment (i.e., d1<d2). Preferably, the distance d2 is largerthan the distance d1 as long as the TCP maintains the thinness.

[0153] The first semiconductor element 20 is slightly offset upward inthe device hole 14. The second semiconductor element 30 is slightlyoffset downward in the device hole 14. Accordingly, the lengths of thefirst and the second leads 16 a and 16 b are optimally made rather longso that the leads 16 a and 16 b comprise length sufficient to form theoffsets.

[0154] Since requirements for shape and arrangement of the semiconductorelements to be mounted are the same as those for the seventh embodiment,explanation thereof will be omitted.

[0155] The fabrication methods of the tape carrier 10 of the presentembodiment is substantially the same as those of the seventh embodiment,except that the margins are included in the first and second inner leadportions 16 a and 16 b, so explanation thereof will be omitted. Thefabrication methods of the TCP of the present embodiment issubstantially the same as those of the seventh embodiment, except thatthe mold 60 is formed with the distance d2 being kept, so explanationthereof will also be omitted.

[0156] Although two of the semiconductor elements are mounted in thepresent embodiment, three or more of the semiconductor elements may alsobe mounted. In this case, a tape carrier 10 which includes sets of leadshaving three different lengths may be used. An unillustrated thirdsemiconductor element may be adhered to the upper surface of the secondsemiconductor element 30 which is spaced apart from the firstsemiconductor element 20.

[0157] In the structure of the eighth embodiment, the distance betweenthe opposing surfaces of the semiconductor elements becomes larger.Therefore, in addition to the effects achieved by the seventhembodiment, mutual interference between the semiconductor elementsresulting from noise, or the like, generated by the semiconductorelements can be reduced. Accordingly, malfunctions, such as improperoperations, of the semiconductor elements can be prevented.

[0158] Ninth Embodiment

[0159]FIGS. 9A and 9B schematically illustrate a ninth embodiment of thepresent invention. FIG. 9A is a plan view schematically illustrating aTCP structure having two semiconductor elements mounted on a tapecarrier 10. FIG. 9B is a sectional view taken along line C-C′ of FIG. 9Aand seen from the direction indicated by arrows.

[0160] Hereinafter, the ninth embodiment of the present invention willbe described with reference to FIGS. 9A and 9B. In the ninth embodiment,as in the case of, for example, the fourth embodiment, the tape carrier10 includes the sets of the leads 16. Each of the set is composed of thefirst lead 16 a and the second lead 16 b, which is shorter than thefirst lead 16 a. Several sets of the leads 16 are disposed parallel toone another on the base tape 11. Three semiconductor elements aremounted in a device hole 14. The present embodiment differs from thefourth embodiment in that outer lead portions of the leads 16 are formedas lands 50, to which metal balls 52, serving as electrodes, areconnected. Therefore, the ninth embodiment relates to a tape carrierwhose external connection terminals are formed as BGA.

[0161] The outer lead portions of the leads 16a are formed as lands 50at areas where the metal balls 52, serving as external connectionelectrodes, can be connected. The lands 50 are arranged in a gridpattern and surround the device hole 14. The lands 50 are disposed ontwo concentric rectangles with the center of the device hole 14 beingthe center of concentricity equidistantly from adjacent lands 50. In thepresent embodiment, eleven lands 50 are disposed on each of the foursides of the outer concentric rectangle, and nine lands 50 are disposedon each of the four sides of the inner concentric rectangle. Thus, thepresent embodiment can also be considered as being fabricated in amanner that, the 11×11 lands 50 are disposed on the base tape 11 in agrid pattern, and then the device hole 14 is formed to have only theoutermost two lines of lands 50. The total number of the lands 50 islarger than the total number of the leads 16. The outer lead portionside terminals of the first leads 16 a that are opposite to the innerlead portion side are connected to the lands 50 disposed on the innerconcentric rectangle. The second leads 16 b are connected to the lands50 disposed on the outer concentric rectangle. The metal balls 52,serving as electrodes, are connected to the lands 50. As in the cases ofthe above-described embodiments, the leads 16 are covered with andprotected by a solder resist 18 within a range in which the leads 16 areon the base tape 11. That is, the base tape 11 is covered and protectedby the solder resist 18 except the areas where the lands 50 and themetal balls 52 are disposed. The solder resist 18 includes openings 19 aformed therein for exposing the upper surfaces 50 a of the lands 50. Toexplain in more detail, the solder resist 18 may be formed by a screenmasking method in which the solder resist 18 is applied selectively tothe required portions, or by a method in which a photo solder resist isfirst applied to an entire surface, then exposed or etched so that thephoto solder resist is left only at desired areas. The metal balls 52are connected to the upper surfaces 50 a of the lands 50 via theopenings 19 a. To explain in more detail, the metal balls 52 are firstmounted on the lands 50 using a flux, then the metal balls 52 areconnected to the lands 50 by re-flowing. The metal balls 52 protrudefrom the solder resist 18. The metal balls 52 are plated with metal,such as Au, solder, or the like. The TCP is mounted on, for example, aprinted wiring board via the metal balls 52.

[0162] Although the configuration of the first and second leads 16 a and16 b, the number, the size, and the arrangement of the semiconductorelements of the present embodiment are decided according to the fourthembodiment, the present invention is not limited to the same. Thesemiconductor elements of the ninth embodiment can be mounted on thetape carrier 10 in any manner as described in the foregoing embodimentsand modified embodiments. For example, as shown in the third embodiment,sets of inner lead portions having three different lengths may beprepared and three semiconductor elements may be oriented in the samedirection.

[0163] In the present embodiment, each lead 16 is connected to theclosest land 50. However, the land 50 to which each lead 16 is connectedcan be selected freely as long as the lead 16 does not form shortcircuits with the other leads 16 or with the metal balls, andmalfunctions, such as signal delays, do not occur.

[0164] According to the present embodiment, in addition to the effectsachieved by the above-described embodiments, because leads of the outerlead portion side can be more freely connected, positions of terminalswhich output the output signal of the mounted semiconductor elements canbe selected freely as long as troubles, such as short circuits or signaldelays, do not occur.

[0165] The fabrication method of the tape carrier 10 and the TCP of thepresent embodiment are substantially the same as those of theabove-described embodiments. Therefore, only the summary of thefabrication method of the TCP of the present embodiment will be given.If the lands 50 are formed in a conventional method, the solder resistmay be formed such that the upper surfaces 50 a of the lands 50 areexposed through the openings 19 a.

[0166] With such a structure, the functions of the TCP can be furtherimproved and higher values can be added to the TCP by mounting aplurality of the semiconductor elements. Further, the TCP can be mountedon, for example, a printed wiring board at the same time with othercomponents by a method called “re-flowing.” Therefore, the fabricationprocess of the TCP can be simplified, which helps to further reduce themanufacturing cost. The output positions of the output signals of thesemiconductor elements mounted on the TCP can be allocated to the landswith certain degree of freedom.

[0167] Tenth Embodiment

[0168]FIG. 10 schematically illustrates a tenth embodiment of thepresent invention. FIG. 10 is a sectional view of a TCP structure havingthree semiconductor elements mounted on a tape carrier 10.

[0169] The plan view of the tape carrier 10 is substantially the same asFIG. 9A except that the solder resist 18 covers the lands 50 and noopenings 19 a are provided, so an explanation thereof will be omitted.

[0170] Hereinafter, the tenth embodiment of the present invention willbe described with reference to FIG. 10. In the tenth embodiment, as inthe case of the ninth embodiment, the tape carrier 10 includes the setsof the leads 16, each of the sets being composed of the first lead 16aand the second lead 16 b which is shorter than the first lead 16 a.Several sets of the leads 16 are disposed parallel to one another on thebase tape 11. Three semiconductor elements are mounted in a device hole14. The outer lead portions of the leads 16 are formed as lands 50,which are connected to metal balls 52, serving as electrodes. Thepresent embodiment differs from the ninth embodiment in that the metalballs 52 are provided at a lower surface 10 b side of the tape carrier10.

[0171] The tenth embodiment will be described only in connection todifferences thereof with the ninth embodiment. The upper surfaces 50 aof the lands 50 are covered with the solder resist 18. When seen fromthe lower surface 10 b side of the tape carrier 10, the base tape 11includes openings 19 b which pass through lower surfaces 50 b of thelands 50. The metal balls 52 are connected from beneath the base tape11, i.e., connected at the lower surface 10 b side of the tape carrier10 through the openings 19 b.

[0172] Because a structure of the tape carrier 10 and a manner in whichthe semiconductor elements are mounted on the tape carrier 10 in thetenth embodiment are substantially the same as those of the ninthembodiment, explanation thereof will be omitted.

[0173] Although the configuration of the first and second leads 16 a and16 b, the number, the size, and the arrangement of the semiconductorelements of the present embodiment are decided according to the ninthembodiment, the present invention is not limited to the same. Thesemiconductor elements of the tenth embodiment can be mounted on thetape carrier 10 in any manner as described in all of the foregoingembodiments and modified embodiments.

[0174] In the present embodiment, in consideration of signal delays, orthe like, it is preferable to connect each lead 16 to the closest land50. However, the land 50 to which each lead 16 is connected can beselected freely as long as the lead 16 does not form short circuits withother leads 16 or with the metal balls.

[0175] The fabrication method of the tape carrier 10 and the TCP of thepresent embodiment is substantially the same as those of theabove-described embodiments. Therefore, only the summary of thefabrication method of the TCP of the present embodiment will be given.If the lands 50 are formed in a conventional method, the solder resistmay be formed such that the upper surfaces 50 a of the lands 50 areexposed through the openings 19 a.

[0176] First, device holes 14 and sprocket holes 12 are formed on thebase tape 11. The openings 19 b are formed so that the lower surfaces 50b of the lands 50 are exposed at the lower surface 10 b side of the tapecarrier 10. Then, the lands 50 and the leads 16 which are connected tothe lands 50 are formed by a conventional method. Thereafter, the solderresist 18 is provided. Finally, the metal balls 52 are connected to thelands 50 via the openings 19 b.

[0177] According to the TCP structure of the tenth embodiment, inaddition to the effects achieved by the ninth embodiment, because thedirection in which the semiconductor elements are mounted on the tapecarrier 10 (i.e., the downward direction) and the direction in which themetal balls 52 are connected are the same, an even thinner TCP may beobtained.

[0178] Eleventh Embodiment

[0179]FIG. 11 schematically illustrates an eleventh embodiment of thepresent invention. FIG. 11 is a sectional view of a TCP structure havingthree semiconductor elements mounted on a tape carrier 10.

[0180] The plan view of the present embodiment is substantially the sameas FIG. 9A, except that the metal balls 52 are not connected to theopenings 19 a, so explanation thereof will be omitted.

[0181] Hereinafter, the eleventh embodiment of the present inventionwill be described with reference to FIG. 11. In the tape carrier 10 ofthe present invention, the openings 19 a are further formed on a solderresist 18 at the upper surface 50 a side of the lands 50 in the tapecarrier 10 of the tenth embodiment. The metal balls 52 are connected tothe lands 50 via the openings 19 a. Thus, the present embodiment may beconsidered a combined form of the ninth and tenth embodiments, sodetailed explanation thereof will be omitted.

[0182] The leads 16 of the eleventh embodiment are protected by thesolder resist 18 within a range in which the leads 16 are on the basetape 11. That is, the base tape 11 is covered and protected by thesolder resist 18 except the area where the upper surfaces 50 a of thelands 50 are disposed. The solder resist 18 includes the openings 19 aformed thereon for exposing the upper surfaces 50 a of the lands 50.Further, as in the case of the tenth embodiment, openings 19 b areformed on the base tape 11 through which the lower surfaces 50 b of thelands 50 are exposed. The metal balls 52 are connected to the base tape11 from beneath, i.e., connected at the lower surface 10 b side of thetape carrier 10, which is the lower surface 50 b side of the lands 50,through the openings 19 b. Though the metal balls 52 are connected atthe lower surfaces 50 b side of the lands 50 in the present embodiment,the metal balls 52 may be connected to only the upper surfaces 50 a orto both of the upper and lower surfaces (i.e., the upper and lowersurfaces 50 a and 50 b).

[0183] Because the structure of the tape carrier 10 and the manner inwhich the semiconductor elements are mounted on the tape carrier 10 inthe eleventh embodiment are substantially the same as those of the ninthembodiment, explanation thereof will be omitted.

[0184] Although the configuration of the first and second leads 16 a and16 b, the number, the size, and the arrangement of the semiconductorelements of the present embodiment are decided according to the ninthembodiment, the present invention is not limited to the same. Thesemiconductor elements of the eleventh embodiment can be mounted on thetape carrier 10 in any manner described in the foregoing embodiments andmodified embodiments.

[0185] In the present embodiment, in consideration of signal delays, orthe like, it is preferable to connect each lead 16 to the closest land50. However, the land 50 to which each lead 16 is connected can beselected freely as long as the lead 16 does not form short circuits withother leads 16 or with the metal balls.

[0186] According to the structure of the tape carrier 10 of the presentembodiment, when the TCP using the tape carrier 10 is mounted on, forexample, a printed wiring board, the metal balls 52, which are connectedto the lands 50 exposed to the upper or lower surface 10 a or 10 b sideof the tape carrier 10, may be surface mounted on the board. That is,when the tape carrier 10 is mounted on the substrate, the metal balls 52may be selectively disposed on the upper surface 10 a or the lowersurface 10 b of the tape carrier 10. Thus, the tape carrier 10 may bemounted on, for example, a printed wiring board, using both the sidesthereof. As a result, the functions of the TCP can be further improved.

[0187] The fabrication method of the tape carrier 10 and the TCP of thepresent embodiment are substantially the same as those of theabove-described embodiments. Therefore, only a part of the fabricationmethod characteristic of the TCP of the eleventh embodiment will beexplained below.

[0188] First, device holes 14 and sprocket holes 12 are formed on thebase tape 11. The openings 19 b are formed so that the lower surfaces 50b of the lands 50 are exposed at the lower surface 10 b side of the tapecarrier 10. Then, the lands 50 and the leads 16 which are connected tothe lands 50 are formed by a conventional method. Thereafter, theopenings 19 a are formed on the solder resist 18 so that the lands 50are exposed therethrough. Finally, the metal balls 52 are connected tothe lands 50 via the openings 19 b on the base tape 11 or the openings19 a on the solder resist 18.

[0189] Twelfth Embodiment

[0190]FIG. 12 schematically illustrates a twelfth embodiment, which isan applied embodiment of the eleventh embodiment of the presentinvention. FIG. 12 is a sectional view of a TCP which is made up of twoTCPs of the eleventh embodiment stacked in the vertical direction.

[0191] The plan view of the tape carrier 10 of the present embodiment issubstantially the same as FIG. 9A, so explanation thereof will beomitted.

[0192] Hereinafter, the twelfth embodiment of the present invention willbe described with reference to FIG. 12. Because the fabrication methodof the tape carrier 10 and the TCP of the present embodiment aresubstantially the same as those of the eleventh embodiment, explanationthereof will be omitted.

[0193] In the present embodiment, the metal balls 52 of each of the twotape carriers 10 are connected to the tape carrier 10 from beneath viaopenings 19 b of a base tape 11.

[0194] Metal balls 52 a of the first tape carrier 10 aa, which is theupper one of the two stacked TCPs, are connected to lands 50 bb of thesecond tape carrier 10 bb, which is the lower one of the two stackedTCPs, via the openings 19 a formed in a solder resist 18 provided on theupper surface of the second tape carrier 10 bb.

[0195] Although two TCPs are stacked in the present embodiment, three ormore TCPs may be stacked as long as the objects of the present inventionare met. As described in connection with the eleventh embodiment, metalballs 52 a and 52 b may be provided on the upper surfaces of the lands50 aa and 50 bb of the two tape carriers 10 aa and 10 bb and the twotape carriers 10 aa and 10 bb may be stacked.

[0196] Although two identical TCPs are stacked in FIG. 12, the presentinvention is not limited thereto. Conditions, such as the lengths of theinner lead portions, the number of semiconductor elements to be mounted,and the manner in which the semiconductor elements are mounted, may bedifferent between the two TCPs. In a case in which output signals aretransferred directly from the upper TCP to the mounted board, metalballs may be provided on the lands of the intermediate TCP to conductthe upper TCP and the mounted board.

[0197] According to the structure of the present embodiment, output andinput terminals of two or more of TCPs may be integrated on a mountingarea of a single TCP and connected to the mounting board. Further, thesemiconductor elements mounted on the separate tape carriers may beconnected to each other. Accordingly, the functions of the TCP can befurther improved within the same mounting area as those of conventionalTCPs.

[0198] Thirteenth Embodiment

[0199] A thirteenth embodiment relates to a fabrication method of theTCP of the first embodiment of the present invention. FIGS. 13A-13D aresectional views illustrating steps of a fabrication process of thethirteenth embodiment of the present invention. First, as shown in FIG.13A, a tape carrier for the TCP is prepared. A base film 101 is made ofpolyimide, for example. Sprocket holes 102 are formed in the base film101 for conveyance of the same. One end portion of each of the innerlead portions 104 and 105 includes a terminal 103 which is connected toan external substrate. At a bonding step, the other end portion of eachof the inner lead portions 104 and 105 is bonded to a correspondingelectrode on each semiconductor element. The inner lead portion 105connected to electrodes 111 on a lower semiconductor element 107 isshorter than the inner lead portion 104 connected to electrodes 108 onan upper semiconductor element 107. The terminals 103 and the inner leadportions 104 and 105 are plated with Sn, Au or solder. A solder resist106 is formed to protect the copper-made wiring pattern.

[0200] Next, as shown in FIG. 13B, the upper semiconductor element 107is prepared. The protruding electrodes 108, formed on the uppersemiconductor element 107, and the inner lead portions 104 are alignedwith each other, and the inner lead portion 104 is bonded, one at atime, to the protruding electrode 108 using a bonding tool 113 by anultrasonic thermo-compression bonding method, or the like.

[0201] Then, as shown in FIG. 13C, a semiconductor element 110, havingan adhesive applied to the upper surface thereof, is prepared. Theprotruding electrodes 111 and the inner lead portions 105 are alignedwith each other, and the inner lead portion 105 is bonded, one at atime, to the protruding electrode 111 using a bonding tool 113 in theultrasonic thermo-compression bonding method, or the like. Because theelectrodes 111 on the lower semiconductor element 110 are disposed lowerthan the plane on which the inner lead portions 105 extend, the innerlead portions 105 are slightly bent downward. An adhesive 109 may beapplied in advance to the back surface of the upper semiconductorelement 107.

[0202] Finally, as shown in FIG. 13D, a sealing resin 112 seals theentire upper semiconductor element 107, side surfaces of the lowersemiconductor element 110, the inner lead portions 104 and 105, a partof the solder resist 106 and a part of the base film 101 to protect thepackage. Thereafter, the sealing resin 112 is heated and cured (notshown). At the same time, the adhesive 109 is also heated and cured. Inthis manner, the TCP in which two semiconductor elements are stacked isformed.

[0203] Fourteenth Embodiment

[0204] A fourteenth embodiment relates to another fabrication method ofthe TCP of the first embodiment of the present invention. FIGS. 14A-14Dare sectional views illustrating steps of fabrication process of thefourteenth embodiment of the present invention. First, as shown in FIG.14A, a tape carrier for the TCP is prepared. A base film 101 is made ofpolyimide, for example. Sprocket holes 102 are formed on the base film101 for conveyance of the base film 101. One end portion of each of theinner lead portions 104 and 105 is connected to a correspondingelectrode on the semiconductor element. The other end portion of each ofthe inner lead portions 104 and 105 includes a terminal 103 which isconnected to an external substrate. The inner lead portion 105 isshorter than the inner lead portion 104.

[0205] Next, as shown in FIG. 14B, an upper semiconductor element 107 isprepared. The protruding electrodes 108 and the inner lead portions 104are aligned with each other, and all the inner lead portions 104 arebonded, at the same time, to the protruding electrodes 108 using abonding tool 114 by the ultrasonic thermo-compression bonding method, orthe like.

[0206] Then, as shown in FIG. 14C, a semiconductor element 110, havingan adhesive applied to the upper surface thereof, is prepared. Theprotruding electrodes 111 and the inner lead portions 105 are alignedwith each other, and the inner lead portion 105 is bonded, one at atime, to the protruding electrode 111 using a bonding tool 113 in anultrasonic thermo-compression bonding method, or the like. An adhesive109 may be applied in advance to the back surface of the uppersemiconductor element 107.

[0207] Finally, as shown in FIG. 14D, a sealing resin 112 seals theentire upper semiconductor element 107, side surfaces of the lowersemiconductor element 110, the inner lead portions 104 and 105, a partof the solder resist 106 and a part of the base film 101 to protect thepackage. Thereafter, the sealing resin 112 is heated and cured (notshown). At the same time, the adhesive 109 is also heated and cured. Inthis manner, the TCP in which two semiconductor elements are stacked isformed.

What is claimed is:
 1. A semiconductor package comprising: a tapecarrier; a first semiconductor element having a surface and a firstelectrode, on which surface the first electrode is provided; a longerlead which is provided on the tape carrier and connected to the firstelectrode; a second semiconductor element having a surface and a secondelectrode, on which surface the second electrode is provided, and thefirst semiconductor element is stacked; a shorter lead which is providedon the tape carrier and connected to the second electrode and is shorterthan the longer lead; and a resin material which seals the firstsemiconductor element, the second semiconductor element, the longer leadand the shorter lead.
 2. A semiconductor package comprising: a tapecarrier; a first semiconductor element having a surface and a firstelectrode, on which surface the first electrode is provided; a longerlead having two ends and a first land, the one end being connected tothe first electrode and the other end forming the first land on the tapecarrier; a second semiconductor element having a surface and a secondelectrode, on which surface the second electrode is provided, and thefirst semiconductor element is stacked; a shorter lead having two endsand a second land, the one end being connected to the second electrodeand the other end forming a second land on the tape carrier; a resinmaterial which seals the first semiconductor element, the secondsemiconductor element, the longer lead and the shorter lead; and solderballs, which are mounted on the first and second lands for externalconnection.
 3. A semiconductor package according to claim 1, furthercomprising at least another longer lead and at least another shorterlead, wherein each of the longer leads and each of the shorter leads arearranged so as to alternate with each other.
 4. A semiconductor packageaccording to claim 2, further comprising at least another longer leadand at least another shorter lead, wherein each of the longer leads andeach of the shorter leads are arranged so as to alternate with eachother.
 5. A semiconductor package according to claim 1, wherein thesecond semiconductor element is larger than the first semiconductorelement, and comprises a surface area that faces the first semiconductorelement and the second electrode is disposed outside said area.
 6. Asemiconductor package according to claim 2, wherein the secondsemiconductor element is larger than the first semiconductor element,and comprises a surface area that faces the first semiconductor elementand the second electrode is disposed outside said area.
 7. Asemiconductor package according to claim 1, wherein: the firstsemiconductor element includes a first surface, on which the firstelectrode is formed, and a second surface, which is opposite the firstsurface; the second semiconductor element includes a third surface, onwhich the second electrode is formed, and a fourth surface, which isopposite the third surface; and the first semiconductor element and thesecond semiconductor element are stacked such that the second surfacefaces the third surface.
 8. A semiconductor package according to claim2, wherein: the first semiconductor element includes a first surface, onwhich the first electrode is formed, and a second surface, which isopposite the first surface; the second semiconductor element includes athird surface, on which the second electrode is formed, and a fourthsurface, which is opposite the third surface; and the firstsemiconductor element and the second semiconductor element are stackedsuch that the second surface faces the third surface.
 9. A semiconductorpackage according to claim 7, wherein the fourth surface issubstantially devoid of the resin material, and the resin material isapplied to substantially the remainder of the package.
 10. Asemiconductor package according to claim 8, wherein the fourth surfaceis substantially devoid of the resin material, and the resin material isapplied to substantially the remainder of the package.
 11. Asemiconductor package according to claim 1, wherein each of the secondsemiconductor element and the first semiconductor element has two setsof substantially parallel edges, and each of the longer and the shorterleads extends substantially orthogonally to each edge.
 12. Asemiconductor package according to claim 2, wherein each of the secondsemiconductor element and the first semiconductor element has two setsof substantially parallel edges, and each of the longer and the shorterleads extends substantially orthogonally to each edge.
 13. Asemiconductor package according to claim 1, wherein the longer lead andthe shorter lead extend outwardly in substantially the same plane.
 14. Asemiconductor package according to claim 2, wherein the longer lead andthe shorter lead extend outwardly in substantially the same plane.
 15. Asemiconductor package according to claim 7, wherein the second surfaceis adhered to the third surface.
 16. A semiconductor package accordingto claim 8, wherein the second surface is adhered to the third surface.17. A tape carrier comprising: a base tape having a device hole formedtherein; and leads, which include inner lead portions, are provided onthe base tape, wherein the inner lead portions, which extend from theperiphery of the device hole toward the center of the device hole, havedifferent lengths.
 18. A tape carrier according to claim 17, wherein theinner lead portions are in sets of different lengths and disposed atsubstantially regular intervals.
 19. A tape carrier according to claim18, wherein the inner lead portions include three different lengths. 20.A tape carrier package comprising: a base tape; a first semiconductorelement having an upper surface and a first electrode, on which uppersurface the first electrode is provided; a first lead, which first leadis provided on the base tape and connected to the first electrode; asecond semiconductor element having an upper surface and a secondelectrode, on which upper surface the second electrode is provided, asecond lead, which is shorter than the first lead, and is provided onthe base tape and connected to the second electrode; a thirdsemiconductor element having an upper surface and a third electrode, onwhich upper surface the third electrode is provided; a third lead, whichis shorter than the second lead, provided on the base tape and connectedto the third electrode; and a molding member, which seals the firstsemiconductor element, the second semiconductor element, the thirdsemiconductor element, the first lead, the second lead and the thirdlead.
 21. A tape carrier package according to claim 20, wherein thefirst and second semiconductor elements comprise a lower surface and thesemiconductor elements are held such that a space is formed between thelower surface of the first semiconductor element and the upper surfaceof the second semiconductor element, and between the lower surface ofthe second semiconductor element and the upper surface of the thirdsemiconductor element, and a mold is formed around the resultingstructure.
 22. A tape carrier package according to claim 20, whereineach of the first, second and third semiconductor elements has an upperand a lower surface, and the semiconductor elements are stacked suchthat the lower surface of the first semiconductor element and the uppersurface of the second semiconductor element are adhered to each other,and the lower surface of the second semiconductor element and the uppersurface of the third semiconductor element are adhered to each other.23. A tape carrier package, comprising: a base tape; a firstsemiconductor element having upper and lower surfaces and a firstelectrode, on which upper surface the first electrode is provided; afirst lead, which is provided on the base tape and connected to thefirst electrode; a second semiconductor element having upper and lowersurfaces and a second electrode, on which upper surface the secondelectrode is provided, the second semiconductor element being disposedsuch that the side surfaces of the first semiconductor element and thesecond semiconductor element are opposite each other, with a spaceformed therebetween; a first lead which is provided on the base tape andconnected to the second electrode; a third semiconductor element havingan upper surface and a third electrode, on which upper surface the thirdelectrode is provided, and which is disposed at lower surface side ofthe first semiconductor element and the second semiconductor element; asecond lead which is shorter than the first lead, provided on the basetape and connected to the third electrode; a molding member which sealsthe first semiconductor element, the second semiconductor element, thethird semiconductor element, and the first lead and the second lead,wherein both the lower surface of the first semiconductor element andthe lower surface of the second semiconductor element are adhered to theupper surface of the third semiconductor element.
 24. A tape carrierpackage according to claim 21, wherein: a plurality of first electrodesand a plurality of second electrodes are provided; and some of the firstelectrodes and some of the second electrodes are connected to eachother.
 25. A tape carrier package comprising: a base tape; a firstsemiconductor element having an upper surface and a first electrode, onwhich upper surface the first electrode is provided; a first lead, whichis provided on the base tape and connected to the first electrode; asecond semiconductor element on which upper surface a second electrodeis provided; a third semiconductor element having an upper surface and athird electrode, on which upper surface the third electrode is provided,the third semiconductor element being disposed such that the sidesurfaces of the second semiconductor element and the third semiconductorelement are opposite each other and a space is formed therebetween; asecond lead, which is shorter than the first lead, the second lead beingprovided on the base tape and connected to the second electrode and thethird electrode; and a molding member which seals the firstsemiconductor element, the second semiconductor element, the thirdsemiconductor element, the first lead and the second lead, wherein thelower surface of the first semiconductor element is adhered to both theupper surface of the second semiconductor element and the upper surfaceof the third semiconductor element.
 26. A tape carrier packagecomprising: a base tape; a first semiconductor element having a lowersurface, on which lower surface a first electrode is provided; a firstlead, which is provided on the base tape and connected to the firstelectrode; a second semiconductor element having an upper surface, onwhich upper surface a second electrode is provided; a second lead, whichis shorter than the first lead, and is provided on the base tape andconnected to the second electrode; and a molding member which seals thefirst semiconductor element, the second semiconductor element, and thefirst lead and the second lead, wherein the second semiconductor elementis held so as to be spaced apart from the lower surface side of thefirst semiconductor element.
 27. A tape carrier comprising: a base tapehaving a device hole; lands, which are provided on the base tape andarranged in a grid pattern; a plurality of leads, each having an outerlead portion and an inner lead portion, which outer lead portions areconnected to the plurality of lands; a solder resist provided on thelead which includes an opening through which the land is exposed; and ametal ball which is connected to the land via the opening, wherein theinner lead portions, which extend from the periphery of the device holetoward the center of the device hole, having several different lengths.28. A tape carrier comprising: a base tape having a device hole formedtherein and a lower surface; lands, provided on the base tape andarranged in a grid pattern; openings through which the lands are exposedto the lower surface side of the base tape; leads having outer leads andinner leads, the outer lead portions being connected to the plurality oflands; a solder resist provided on the leads; and a metal ball which isconnected to the land via the opening, wherein inner lead portions ofthe leads which extend from the periphery of the device hole toward thecenter of the device hole have several different lengths.
 29. A tapecarrier according to claim 28, wherein the solder resist includesopenings through which the upper surfaces of the lands are exposed. 30.A tape carrier according to claim 27, wherein the inner lead portionshaving different lengths are disposed regularly.
 31. A tape carrieraccording to claim 28, wherein the inner lead portions are in sets ofdifferent lengths and are disposed at substantially regular intervals.32. A semiconductor device in which a plurality of tape carriersaccording to claim 29 is stacked.